MRF559 PDF Datasheet

The MRF559 is RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	MRF559	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS MRF559 MRF559G * G Denotes RoHS Complaint, Pb Free Terminal Finish Features Specified @ 12.5 V, 870 MH- Characteristics Output Power = .5 W Minimum Gain = 8.0 dB Efficiency 50% Cost Effective Macro X Package Electroless Tin Plated Leads for Impro	Advanced Power Technology
2		RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS MRF559 Features Specified @ 12.5 V, 870 MH- Characteristics Output Power = .5 W Minimum Gain = 8.0 dB Efficiency 50% Cost Effective Macro X Package Electr	Microsemi
3		NPN SILICON HIGH FREQUENCY TRANSISTOR MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor . . . designed for UHF linear and large signal amplifier applications. Specified 12.5 Volt, 870 MH- Characteristics Output Power = 0.5 Watts Minimum Gain = 8.0 dB Efficiency 50% S Parameter Data From 250 MH-	Motorola Semiconductors
4	MRF559G	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS MRF559 MRF559G * G Denotes RoHS Complaint, Pb Free Terminal Finish Features Specified @ 12.5 V, 870 MH- Characteristics Output Power = .5 W Minimum Gain = 8.0 dB Efficiency 50% Cost Effective Macro X Package Electroless Tin Plated Leads for Impro	Advanced Power Technology

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Part No	Description	Manufacturers	PDF
MRF555	NPN SILICON RF LOW POWER TRANSISTOR MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF555, D The RF Line NPN Silicon RF Low Power Transistor Designed primarily for wideband large signal predriver stages in the UHF frequency range. Specified @ 12.5 V, 470 MH- Characteristics @ Pout = 1.5 W Common Emitter Power Gain = 1	Motorola Semiconductors
MRF559G	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS MRF559 MRF559G * G Denotes RoHS Complaint, Pb Free Terminal Finish Features Specified @ 12.5 V, 870 MH- Characteristics Output Power = .5 W Minimum Gain = 8.0 dB Efficiency 50% Cost Effective Macro X Package Electroless Tin Plated Leads for Impro	Advanced Power Technology
MRF553	NPN SILICON RF LOW POWER TRANSISTOR MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF553, D The RF Line NPN Silicon RF Low Power Transistor Designed primarily for wideband large signal predriver stages in the VHF frequency range. Specified @ 12.5 V, 175 MH- Characteristics Output Power = 1.5 W Minimum Gain = 11.5 dB	Motorola Semiconductors
MRF5S9150HSR3	SINGLE N-CDMA LATERAL N-CHANNEL RF POWER MOSFETs	Freescale Semiconductor
MRF5S9150HR3	SINGLE N-CDMA LATERAL N-CHANNEL RF POWER MOSFETs	Freescale Semiconductor
MRF5S9101NR1	GSM/GSM EDGE LATERAL N-CHANNEL RF POWER MOSFETs	Freescale Semiconductor
MRF5S9101NBR1	GSM/GSM EDGE LATERAL N-CHANNEL RF POWER MOSFETs	Freescale Semiconductor

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