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MRF553 PDF DatasheetThe MRF553 is NPN SILICON RF LOW POWER TRANSISTOR. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality. Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly. |
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| NO | Part No | Descripción | Manufacturers |
| 1 | MRF553 | NPN SILICON RF LOW POWER TRANSISTOR MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF553, D
The RF Line
NPN Silicon RF Low Power Transistor
Designed primarily for wideband large signal predriver stages in the VHF frequency range.
Specified @ 12.5 V, 175 MH- Characteristics Output Power = 1.5 W Minimum Gain = 11.5 dB
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 Motorola Semiconductors |
| 2 | NPN SILICON RF TRANSISTOR MRF553
NPN SILICON RF TRANSISTOR
DESCRIPTION:
The ASI MRF553 is designed for Low power amplifier applications.
FEATURES:
12.5 V, 175 MHz. POUT = 1.5 W GP = 11.5 min. η = 60 % (Typ)
MAXIMUM RATINGS
IC 500 mA
VCB 36 V
PDISS
3.0 W @ TC = 75 °C
TJ -65 °C to +200 °C
TSTG
-65 °C to +150
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 ASI |
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| 3 | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
MRF553 MRF553G
* G Denotes RoHS Compliant, Pb Free Terminal Finish
Features
Specified @ 12.5 V, 175 MH- Characteristics Output Power = 1.5 W Minimum Gain = 1
|
 Advanced Power Technology |
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| 4 | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Features
Specified @ 12.5 V, 175 MH- Characteristics Output Power = 1.5 W Minimum Gain = 11.5 dB Efficiency 60% (Typ) Cost Effective PowerMacro Package Elec
|
 Microsemi |
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