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MRF555 PDF DatasheetThe MRF555 is NPN SILICON RF LOW POWER TRANSISTOR. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality. Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly. |
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| NO | Part No | Descripción | Manufacturers |
| 1 | MRF555 | NPN SILICON RF LOW POWER TRANSISTOR MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF555, D
The RF Line
NPN Silicon RF Low Power Transistor
Designed primarily for wideband large signal predriver stages in the UHF frequency range.
Specified @ 12.5 V, 470 MH- Characteristics @ Pout = 1.5 W Common Emitter Power Gain = 1
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 Motorola Semiconductors |
| 2 | NPN SILICON RF TRANSISTOR MRF555
NPN SILICON RF TRANSISTOR
DESCRIPTION:
The ASI MRF555 is designed for Wideband large signal stages in the UHF frequency range.
FEATURES:
12.5 V, 470 MHz. POUT = 1.5 W GP = 11 min. η = 60 % (Typ)
MAXIMUM RATINGS
IC 500 mA
VCBO
30 V
PDISS
3.0 W @ TC = 75 °C
TJ -65 °C to +200 °C
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 Advanced Semiconductor |
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| 3 | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Features
Specified @ 12.5 V, 470 MH- Characteristics Output Power = 1.5 W Minimum Gain = 11 dB Efficiency 60% (Typ) Cost Effective PowerMacro Package Electr
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 Microsemi |
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| 4 | Trans GP BJT NPN 16V 0.5A 4-Pin Power Macro |
 New Jersey Semiconductor |
| Product Description and Specifications |
Displays the Product Image or Pinouts.  1. - 16V, NPN, RF Transistor [ Learn More ] |
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