TK13A60D PDF Datasheet

The TK13A60D is Switching Regulator Applications. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	TK13A60D	Switching Regulator Applications TK13A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK13A60D Switching Regulator Applications Low drain-source ON-resistance: RDS (ON) = 0.33 Ω (typ.) High forward transfer admittance: \|Yfs\| = 6.5 S (typ.) Low leakage current: IDSS = 10 μA (VDS = 600 V) Enhancem	Toshiba Semiconductor

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Part No	Description	Manufacturers	PDF
TK13A65U	N-Channel MOSFET ( 650V, 13A ) • Low drain-source ON resistance: RDS (ON) = 0.32 Ω (typ.) • High forward transfer admittance: Yfs = 8.0 S (typ.) Low • leakage current: IDSS = 100 μA (max) (VDS = 650 V)	Toshiba Semiconductor
TK13A50D	Field Effect Transistor TK13A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK13A50D Switching Regulator Applications Ф3.2 ± 0.2 10 ± 0.3 Unit: mm 2.7 ± 0.2 A 3.9 3.0 1.14 ± 0.15 2.8 MAX. 2.54 1 2 3 2.6 ± 0.1 0.69 ± 0.15 Ф0.2 M A Low drain-source ON resistance: RDS (ON) = 0.31 �	Toshiba
TK13A45D	Field Effect Transistor TK13A45D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK13A45D Switching Regulator Applications Low drain-source ON-resistance: RDS (ON) = 0.38 Ω (typ.) High forward transfer admittance: Yfs = 6.0 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 450 V) Enhan	Toshiba Semiconductor
TK13P25D	MOSFET, Transistor	Toshiba Semiconductor
TK13J65U	MOSFET, Transistor	Toshiba Semiconductor
TK13H90A1	Switching Regulator Applications	Toshiba Semiconductor
TK13E25D	MOSFET, Transistor	Toshiba Semiconductor

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