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TK13A50D PDF DatasheetThe TK13A50D is Field Effect Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality. Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly. |
| NO | Part No | Descripción | Manufacturers |
| 1 | TK13A50D | Field Effect Transistor TK13A50D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)
TK13A50D
Switching Regulator Applications
Ф3.2 ± 0.2 10 ± 0.3
Unit: mm
2.7 ± 0.2 A 3.9 3.0 1.14 ± 0.15 2.8 MAX. 2.54 1 2 3 2.6 ± 0.1 0.69 ± 0.15 Ф0.2 M A
Low drain-source ON resistance: RDS (ON) = 0.31 �
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Toshiba |
| 2 | TK13A50DA | Field Effect Transistor TK13A50DA
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)
TK13A50DA
Switching Regulator Applications
Low drain-source ON-resistance: RDS (ON) = 0.39 Ω (typ.) High forward transfer admittance: Yfs = 6.0 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 500 V) Enh
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Toshiba Semiconductor |
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