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MRF6P3300HR3 PDF Datasheet

The MRF6P3300HR3 is (MRF6P3300HR3 / MRF6P3300HR5) RF Power Field Effect Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.


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NO Part No Descripción Manufacturers
1 MRF6P3300HR3 (MRF6P3300HR3 / MRF6P3300HR5) RF Power Field Effect Transistor

Freescale Semiconductor Technical Data Document Number: MRF6P3300H Rev. 1, 5, 2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband perf
Freescale Semiconductor
Freescale Semiconductor




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Part NoDescriptionManufacturersPDF
MRF6P27160HR6 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

Freescale Semiconductor Technical Data MRF6P27160H Rev. 0, 1, 2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for N - CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o
Freescale Semiconductor
Freescale Semiconductor
datasheet MRF6P27160HR6 pdf
MRF6P3300HR5 (MRF6P3300HR3 / MRF6P3300HR5) RF Power Field Effect Transistor

Freescale Semiconductor Technical Data Document Number: MRF6P3300H Rev. 1, 5, 2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband perf
Freescale Semiconductor
Freescale Semiconductor
datasheet MRF6P3300HR5 pdf
MRF6P23190HR6 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

Freescale Semiconductor Technical Data Document Number: MRF6P23190H Rev. 2, 3, 2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 2300 to 2400 MHz. Suitable for WiMAX, WiBro and multicarrier amplifi
Freescale Semiconductor
Freescale Semiconductor
datasheet MRF6P23190HR6 pdf
MRF6VP41KHSR6 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETFreescale Semiconductor
Freescale Semiconductor
datasheet MRF6VP41KHSR6 pdf
MRF6VP41KHR6 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETFreescale Semiconductor
Freescale Semiconductor
datasheet MRF6VP41KHR6 pdf
MRF6VP3450HSR6 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETFreescale Semiconductor
Freescale Semiconductor
datasheet MRF6VP3450HSR6 pdf
MRF6VP3450HSR5 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETFreescale Semiconductor
Freescale Semiconductor
datasheet MRF6VP3450HSR5 pdf


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