|
|
|
MRF6P27160HR6 PDF DatasheetThe MRF6P27160HR6 is RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality. Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly. |
| NO | Part No | Descripción | Manufacturers |
| 1 | MRF6P27160HR6 | RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Freescale Semiconductor Technical Data
MRF6P27160H Rev. 0, 1, 2005
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for N - CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o
|
Freescale Semiconductor |
|
Searching...
Relevant Search Results
Share Link
Sitemap Link
|