IXFH26N60Q PDF Datasheet

The IXFH26N60Q is Power MOSFETs. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	IXFH26N60Q	Power MOSFETs HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv, dt, Low Qg IXFH 26N60Q IXFT 26N60Q VDSS ID25 RDS(on) = 600 V = 26 A = 0.25 Ω trr ≤ 250 ns Symbol VDSS VDGR V GS VGSM I D25 IDM IAR EAR EAS dv, dt P D TJ T JM Tstg T L Md Weight Symbol VDSS VGS(th) IGSS IDS	IXYS

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ixfh26n60q-mosfet

1. 600V, 26A, MOSFET - IXYS

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Part No	Description	Manufacturers	PDF
IXFH20N80Q	HiPerFETTM Power MOSFETs Q-Class Advanced Technical Information HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv, dt Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv, dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in) from case for 10 s Mounting torque TO-247 TO-268 TO-264 Test Conditions	IXYS Corporation
IXFH24N50Q	HiPerFET Power MOSFETs HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv, dt VDSS IXFH, IXFT 24N50Q IXFH, IXFT 26N50Q ID25 RDS(on) 0.23 Ω 0.20 Ω 500 V 24 A 500 V 26 A trr ≤ 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv, dt PD TJ TJM Tstg TL Md Weight Test C	IXYS Corporation
IXFH26N50Q	HiPerFET Power MOSFETs HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv, dt VDSS IXFH, IXFT 24N50Q IXFH, IXFT 26N50Q ID25 RDS(on) 0.23 Ω 0.20 Ω 500 V 24 A 500 V 26 A trr ≤ 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv, dt PD TJ TJM Tstg TL Md Weight Test C	IXYS Corporation
IXFH9N80Q	Power MOSFETs	IXYS
IXFH9N80	Power MOSFETs	IXYS
IXFH9N100	(IXFHxxxx) HiPerRF Power MOSFETs F-Class: MegaHertz Switching	IXYS Corporation
IXFH96N20P	PolarHT Power MOSFET	IXYS

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