IXFH20N80Q PDF Datasheet

The IXFH20N80Q is HiPerFETTM Power MOSFETs Q-Class. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	IXFH20N80Q	HiPerFETTM Power MOSFETs Q-Class Advanced Technical Information HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv, dt Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv, dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in) from case for 10 s Mounting torque TO-247 TO-268 TO-264 Test Conditions	IXYS Corporation

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Part No	Description	Manufacturers	PDF
IXFH24N50Q	HiPerFET Power MOSFETs HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv, dt VDSS IXFH, IXFT 24N50Q IXFH, IXFT 26N50Q ID25 RDS(on) 0.23 Ω 0.20 Ω 500 V 24 A 500 V 26 A trr ≤ 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv, dt PD TJ TJM Tstg TL Md Weight Test C	IXYS Corporation
IXFH26N50Q	HiPerFET Power MOSFETs HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv, dt VDSS IXFH, IXFT 24N50Q IXFH, IXFT 26N50Q ID25 RDS(on) 0.23 Ω 0.20 Ω 500 V 24 A 500 V 26 A trr ≤ 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv, dt PD TJ TJM Tstg TL Md Weight Test C	IXYS Corporation
IXFH22N55	HiPerFET Power MOSFET HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avlanche Rated, High dv, dt, Low trr Preliminary data Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv, dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in) from case for 10 s Mounting torque Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS =	IXYS
IXFH9N80Q	Power MOSFETs	IXYS
IXFH9N80	Power MOSFETs	IXYS
IXFH9N100	(IXFHxxxx) HiPerRF Power MOSFETs F-Class: MegaHertz Switching	IXYS Corporation
IXFH96N20P	PolarHT Power MOSFET	IXYS

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