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IRFR234 PDF DatasheetThe IRFR234 is Power MOSFET, Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality. Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly. |
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| NO | Part No | Descripción | Manufacturers |
| 1 | IRFR234 | Power MOSFET, Transistor $GYDQFHG 3RZHU 026)(7
IRFR234
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current: 10 A (Max.) @ VDS = 250V Lower RDS(ON): 0.327Ω (Typ.)
BVDSS = 250 V RDS(on) = 0.45Ω ID = 6.6
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 Fairchild Semiconductor |
| 2 | IRFR234A | Power MOSFET, Transistor
)($785(6
Q $YDODQFKH 5XJJHG 7HFKQRORJ\ Q 5XJJHG *DWH 2[LGH 7HFKQRORJ\ Q , RZHU ,QSXW &DSDFLWDQFH Q ,PSURYHG *DWH &KDUJH Q ([WHQGHG 6DIH 2SHUDWLQJ $UHD Q , RZHU , HDNDJH &XUUHQW $ 0D[ # 9'6 9 Q , RZHU 5'6 21 æ 7\S
%9'66 9 5'
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 Samsung |
| 3 | IRFR234B | 250V N-Channel MOSFET IRFR234B , IRFU234B
November 2001
IRFR234B , IRFU234B
250V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize
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Fairchild Semiconductor |
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