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IRFR210 PDF DatasheetThe IRFR210 is Power MOSFET, Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality. Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly. |
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| NO | Part No | Descripción | Manufacturers |
| 1 | IRFR210 | Power MOSFET, Transistor |
 International Rectifier |
| 2 | Power MOSFET, Transistor www.vishay.com
IRFR210, IRFU210, SiHFR210, SiHFU210
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) ( ) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
200 VGS = 10 V
8.2 1.8 4.5 Single
1.5
D
DPAK (TO-252)
D
IPAK (TO-251)
D
G
GS
GD S
S N-Channel MOSFET
FEATURES
Dynamic dV
|
 Vishay Siliconix |
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| 3 | IRFR210A | Power MOSFET, Transistor
)($785(6
Q $YDODQFKH 5XJJHG 7HFKQRORJ\ Q 5XJJHG *DWH 2[LGH 7HFKQRORJ\ Q , RZHU ,QSXW &DSDFLWDQFH Q ,PSURYHG *DWH &KDUJH Q ([WHQGHG 6DIH 2SHUDWLQJ $UHD Q , RZHU , HDNDJH &XUUHQW P$ 0D[ # 9'6 9 Q , RZ 5'6 21 : 7\S
%9'66 9 5'
|
 Samsung |
| 4 | IRFR210B | 200V N-Channel MOSFET IRFR210B , IRFU210B
November 2001
IRFR210B , IRFU210B
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize
|
 Fairchild Semiconductor |
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