IRF830PBF PDF Datasheet

The IRF830PBF is Power MOSFET, Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	IRF830PBF	Power MOSFET, Transistor Lead-Free PD - 94881 IRF830PbF www.irf.com 1 12, 10, 03 IRF830PbF 2 www.irf.com IRF830PbF www.irf.com 3 IRF830PbF 4 www.irf.com IRF830PbF www.irf.com 5 IRF830PbF 6 www.irf.com IRF830PbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 2.87 (.113) 2.62 (.103) 10.	International Rectifier
2	IRF830PBF	N-Channel Type Power MOSFET IRF830PBF ® Pb Free Plating Product IRF830PBF Pb 5.0A,500V Heatsink N-Channel Type Power MOSFET Features RDS(on) (Max 1.5 )@VGS=10V Gate Charge (Typical 18.5nC) Improved dv, dt Capability High ruggedness 100% Avalanche Tested 1. Gate { { 2. Drain { 3. Source BVDSS = 500V RDS(	Thinki Semiconductor

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Part No	Description	Manufacturers	PDF
IRF830	PowerMOS transistor Avalanche energy rated Philips Semiconductors Product specification PowerMOS transistor Avalanche energy rated FEATURES Repetitive Avalanche Rated Fast switching High thermal cycling performance Low thermal resistance g IRF830 SYMBOL d QUICK REFERENCE DATA VDSS = 500 V ID = 5.9 A RDS(ON) ≤ 1.5 Ω s GENERAL DE	NXP Semiconductors
IRF830A	Power MOSFET, Transistor Power MOSFET IRF830A, SiHF830A Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS = 10 V 24 6.3 11 Single 1.4 TO-220AB D S D G G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES Low Gate Charge Qg Resu	Vaishali Semiconductor
IRF830AL	Power MOSFET(Vdss=500V/ Rds(on)max=1.40ohm/ Id=5.0A) PD- 92006A SMPS MOSFET IRF830AS, L HEXFET® Power MOSFET Applications Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply l High Speed Power Switching l VDSS 500V RDS(on) max 1.40Ω ID 5.0A Benefits Low Gate Charge Qg Results in Simple Drive Requirement l Improved Gate, Avalanche	International Rectifier
IRF8915PBF	HEXFET Power MOSFET	International Rectifier
IRF8915	HEXFETPower MOSFET	International Rectifier
IRF8910PBF-1	Power MOSFET, Transistor	International Rectifier
IRF8910PBF	HEXFET Power MOSFET	International Rectifier

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