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IRF830A Datasheet PDF | Stock |
| Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly. |
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- IRF830A
N-Channel Power MOSFET, Transistor
SEMICONDUCTOR IRF830 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET (4.5A, 500Volts) DESCRIPTION The Nell IRF830 are N-Channel enhancement mode silicon gate power field effect transistors. They are designed, tested and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. They are designed as an extremely efficient and reliable device for use in a wide variety of applications such as switching regulators. convertors, UPS, switching - IRF830A
Power MOSFET, Transistor
SMPS MOSFET PD- 91878D IRF830A Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching HEXFET® Power MOSFET VDSS 500V Rds(on) max ID 1.40Ω 5.0A Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv, dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Effective Coss specified ( See AN 1001) TO-220AB G D S Absolute Maximum Ratings ID @ TC = 25°C - IRF830A
Power MOSFET, Transistor
Power MOSFET IRF830A, SiHF830A Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS = 10 V 24 6.3 11 Single 1.4 TO-220AB D S D G G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES Low Gate Charge Qg Results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dV, dt Ruggedness Available RoHS* COMPLIANT Fully Characterized Capacitance and Avalanche Voltage and Current Effective Coss - IRF830A
Power MOSFET, Transistor
Power MOSFET IRF830A, SiHF830A Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS = 10 V 24 6.3 11 Single 1.4 TO-220AB D S D G G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES Low Gate Charge Qg Results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dV, dt Ruggedness Available RoHS* COMPLIANT Fully Characterized Capacitance and Avalanche Voltage and Current Effective Coss - IRF830AL
Power MOSFET(Vdss=500V/ Rds(on)max=1.40ohm/ Id=5.0A)
PD- 92006A SMPS MOSFET IRF830AS, L HEXFET® Power MOSFET Applications Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply l High Speed Power Switching l VDSS 500V RDS(on) max 1.40Ω ID 5.0A Benefits Low Gate Charge Qg Results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv, dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Effective Coss specified (See AN 1001) l D2Pak TO-262 Absolute Maximum Ratings Parameter ID @ TC
nELL
International Rectifier
Vaishali Semiconductor
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