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IRF8910PBF Datasheet PDF
- HEXFET Power MOSFET - MOSFET
PD -95673 IRF8910PbF HEXFET® Power MOSFET Applications l Dual SO-8 MOSFET for POL converters in desktop, servers, graphics cards, game consoles and set-top box l VDSS 20V 13.4m:@VGS = 10V 1 2 3 4 RDS(on) max ID 10A Lead-Free S1 G1 S2 G2 8 7 6 5 Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current l 20V VGS Max. Gate Rating D1 D1 D2 D2 Top View SO-8 Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70
International Rectifier - Power MOSFET, Transistor - MOSFET
VDS RDS(on) max (@VGS = 10V) RDS(on) max (@VGS = 4.5V) Qg (typical) ID (@TA = 25°C) 20 13.4 18.3 7.4 10 V mΩ nC A Features Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial qualification IRF8910PbF-1 HEXFET® Power MOSFET S1 1 G1 2 S2 3 G2 4 8 D1 7 D1 6 D2 5 D2 Top View SO-8 Benefits ⇒ Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Base Part Number
International Rectifier
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