3SK299 PDF Datasheet

The 3SK299 is RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL-GATE MES FIFLD-EFFECT TRANSISTOR 4 PIN SMALL MINI MOLD. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	3SK299	RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL-GATE MES FIFLD-EFFECT TRANSISTOR 4 PIN SMALL MINI MOLD DATA SHEET MES FIELD EFFECT TRANSISTOR 3SK299 RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL-GATE MES FIFLD-EFFECT TRANSISTOR 4 PIN SMALL MINI MOLD FEATURES Suitable for use as RF amplifier in UHF TV tuner. Low Crss : 0.02 pF TYP. High GPS : 20 dB TYP. Low NF : 1.1 dB TYP. 4 PIN SMALL MINI MOL	NEC

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Relevant Search Results

Part No	Description	Manufacturers	PDF
3SK290	Silicon N-Channel Dual Gate MOS FET 3SK290 Silicon N-Channel Dual Gate MOS FET ADE-208-271 1st. Edition Application UHF RF amplifier Features · Low noise figure. NF = 2.3 dB Typ. at f = 900 MH- · High gain. PG = 19.3 dB Typ. at f = 900 MHz Outline CMPAK 4 2 3 4 1 1. Source 2. Gate1 3. Gate2 4. Drain 3SK290 Absolute Maximum Rat	Hitachi Semiconductor
3SK291	N CHANNEL DUAL GATE MOS TYPE (TV TUNER/ UHF RF AMPLIFIER APPLICATIONS)	Toshiba Semiconductor
3SK292	N CHANNEL DUAL GATE MOS TYPE (TV TUNER/ VHF RF AMPLIFIER APPLICATIONS)	Toshiba Semiconductor
3SK298	Silicon N-Channel Dual Gate MOS FET	Hitachi Semiconductor
3SK297	Silicon N-Channel Dual Gate MOS FET	Hitachi Semiconductor
3SK296	Silicon N-Channel Dual Gate MOS FET	Hitachi Semiconductor
3SK295	Silicon N-Channel Dual Gate MOS FET	Hitachi Semiconductor

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