3SK290 PDF Datasheet

The 3SK290 is Silicon N-Channel Dual Gate MOS FET. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.

Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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NO	Part No	Descripción	Manufacturers
1	3SK290	Silicon N-Channel Dual Gate MOS FET 3SK290 Silicon N-Channel Dual Gate MOS FET ADE-208-271 1st. Edition Application UHF RF amplifier Features · Low noise figure. NF = 2.3 dB Typ. at f = 900 MH- · High gain. PG = 19.3 dB Typ. at f = 900 MHz Outline CMPAK 4 2 3 4 1 1. Source 2. Gate1 3. Gate2 4. Drain 3SK290 Absolute Maximum Rat	Hitachi Semiconductor

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Part No	Description	Manufacturers	PDF
3SK291	N CHANNEL DUAL GATE MOS TYPE (TV TUNER/ UHF RF AMPLIFIER APPLICATIONS)	Toshiba Semiconductor
3SK292	N CHANNEL DUAL GATE MOS TYPE (TV TUNER/ VHF RF AMPLIFIER APPLICATIONS)	Toshiba Semiconductor
3SK293	N CHANNEL DUAL GATE MOS TYPE (TV TUNER/ UHF RF AMPLIFIER APPLICAITONS)	Toshiba Semiconductor
3SK299	RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL-GATE MES FIFLD-EFFECT TRANSISTOR 4 PIN SMALL MINI MOLD	NEC
3SK298	Silicon N-Channel Dual Gate MOS FET	Hitachi Semiconductor
3SK297	Silicon N-Channel Dual Gate MOS FET	Hitachi Semiconductor
3SK296	Silicon N-Channel Dual Gate MOS FET	Hitachi Semiconductor

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