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AON3806 Datasheet PDF | Stock |
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- AON3806
Field Effect Transistor
AON3806 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description provide Features VDS (V) = 20V ID = 7.3 A (VGS = 10V) RDS(ON) < 26mΩ (VGS = 4.5V) RDS(ON) < 27mΩ (VGS = 4V) RDS(ON) < 32mΩ (VGS = 2.5V) ESD Rating: 2500V HBM The AON3806 uses advanced trench technology to excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-direc
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