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AON3601 Datasheet PDF
- Field Effect Transistor - Transistor
AON3601 Complementary Enhancement Mode Field Effect Transistor General Description The AON3601 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in power inverters, and other applications.Standard Product AON3601 is Pb- Features n-channel VDS (V) = 30V ID = 6.6A (VGS=10V) RDS(ON) < 29m Ω (VGS=10V) < 42m Ω (VGS=4.5V) p-channel -30V -5A (VGS = -10V) RDS(ON) < 52mΩ (VGS = -10V) < 72mΩ (VGS = -4.5V) free (meets
Alpha & Omega Semiconductors
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