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2SD201 Datasheet PDF | Stock |
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- 2SD201
SILICON POWER TRANSISTOR
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD201 DESCRIPTION ·With TO-3 package ·Large current capability ·Wide area of safe operation APPLICATIONS ·For power amplifier and switching applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collec - 2SD2010
NPN Transistor - 2SD2012
NPN Silicon Power Transistors
MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SD2012 Features High DC Current Gain: hFE(1) =100 (Min.) Low Saturation Voltage: VCE(sat)=1.0V (Max.) High Power Dissipation: PC=25W (TC=25OC) Lead Free Finish, RoHS Compliant (Note1) ("P" Suffix designates RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability rating MaMxoimisuuremSRenastitiinvigtysLevel 1 Mounting Torgue: 5 in-lbs Maximum Symbol - 2SD2012
NPN Transistor
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SD2012 TRANSISTOR (NPN) FEATURES - High DC Current Gain - Low Saturation Voltage - High Power Dissipation TO 220 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambi - 2SD2012
Silicon NPN Transistor
Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 2A , IB = 0.2A) High power dissipation: PC = 25 W (Tc = 25°C)
SavantIC
MCC
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