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2SD2012 PDF DatasheetThe 2SD2012 is Silicon NPN Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality. Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly. |
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| NO | Part No | Descripción | Manufacturers |
| 1 | 2SD2012 | NPN Silicon Power Transistors MCC TM
Micro Commercial Components
omponents 20736 Marilla Street Chatsworth
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2SD2012
Features
High DC Current Gain: hFE(1) =100 (Min.) Low Saturation Voltage: VCE(sat)=1.0V (Max.) High Power Dissipation: PC=25W (TC=25OC) Lead Free Finish, RoHS Compliant
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 MCC |
| 2 | NPN Transistor JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220 Plastic-Encapsulate Transistors
2SD2012 TRANSISTOR (NPN)
FEATURES - High DC Current Gain - Low Saturation Voltage - High Power Dissipation
TO 220
1. BASE 2. COLLECTOR 3. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VC
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 JCST |
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| 3 | Silicon NPN Transistor Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 2A , IB = 0.2A) High power dissipation: PC = 25 W (Tc = 25°C)
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 Toshiba Semiconductor |
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| 4 | NPN SILICON POWER TRANSISTOR HIGH DC CURRENT GAIN LOW SATURATION VOLTAGE INSULATED PACKAGE FOR EASY MOUNTING, GENERAL PURPOSE POWER AMPLIFIERS s GENERAL PURPOSE SWITCHING
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 STMicroelectronics |
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