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VN10LM Datasheet PDF
- TMOS FET Transistor - Transistor
MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N Channel Enhancement 3 DRAIN 2 GATE 1 SOURCE Order this document by VN10LM, D VN10LM 1 23 CASE 29 05, STYLE 22 TO 92 (TO 226AE) MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage Gate Source Voltage Continuous Non repetitive (tp ≤ 50 s) Drain Current Continuous(1) Pulsed(2) Total Device Dissipation @ TA = 25°C Derate above 25°C VDSS VGS VGSM ID IDM PD 60 Vdc ± 20 Vdc ± 40 Vpk 0.3 Adc 1.0 1.0 Watts 8.0 mW,
Motorola Semiconductors - N-Channel Enhancement-Mode MOS Transistors - Transistor
VN0610LL, VN10LM N-Channel Enhancement-Mode MOS Transistors VN0610LL , VN10LM FEATURES CORPORATION Low rDS(on) <5Ω Switching Amplification PIN CONNECTIONS ORDERING INFORMATION Part Package Temperature Range -55oC to +150oC -55oC to +150oC VN0610LL Plastic TO-92 VN10LM Plastic TO-237 For sorted chips in carriers see 2N7000 APPLICATIONS BOTTOM VIEW BOTTOM VIEW 3 TO-92 (TO-226AA) 2 1 1 2 3 1. SOURCE 2. GATE 3. DRAIN TO-237 1 2 3 1. SOURCE 2. GATE 3. TAB-DRAIN CD5 ABSOLUTE MAXIMUM
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