UTC 2N3904
NPN EPITAXIAL SILICON TRANSISTOR
GENERAL PURPOSE APPLIATION
FEATURES
*Collector-Emitter Voltage: VCEO=40V *Collector Dissipation: Pc(max)=625mW *Complementary to 2N3906
1
TO-92
1:EMITTER 2:BASE 3:COLLECTOR
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
PARAMETER
SYMBOL
RATING
Collector-base voltage
VCBO
60
Collector-emitter voltage
VCEO
40
Emitter-base voltage
VEBO
6
Collector current
Ic 200
Collector dissipation
Pc 625
Junction Temperature