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UT5003 Datasheet PDF

  • DUAL ENHANCEMENT MODE - Data

    UNISONIC TECHNOLOGIES CO., LTD UT5003 DUAL ENHANCEMENT MODE (N-CHANNEL, P-CHANNEL) DESCRIPTION The UT5003 can provide excellent RDS (ON) and low gate charge by using UTC’s advanced trench technology. This device is suitable for use as a load switch or in PWM applications. FEATURES * N-Channel: 30V, 7A RDS(ON) < 27.5mΩ @ VGS=10V, ID=7A RDS(ON) < 40mΩ @ VGS=4.5V, ID=6A * P-Channel: -30V, -5A RDS(ON) < 45mΩ @ VGS=-10V, ID=-5A RDS(ON) < 80mΩ @ VGS=-4.5V, ID=-4A * Super high dense cell de

    Unisonic Technologies
    Unisonic Technologies


  • DUAL ENHANCEMENT MODE - Data

    UNISONIC TECHNOLOGIES CO., LTD UT5003Z DUAL ENHANCEMENT MODE (N-CHANNEL, P-CHANNEL) DESCRIPTION The UT5003Z can provide excellent RDS (ON) and low gate charge by using UTC’s advanced trench technology. This device is suitable for use as a load switch or in PWM applications. FEATURES * N-Channel: 30V, 7A RDS(ON) < 27.5mΩ @ VGS=10V, ID=7A RDS(ON) < 40mΩ @ VGS=4.5V, ID=6A * P-Channel: -30V, -5A RDS(ON) < 45mΩ @ VGS=-10V, ID=-5A RDS(ON) < 80mΩ @ VGS=-4.5V, ID=-4A SYMBOL Power MOSFET

    Unisonic Technologies
    Unisonic Technologies




 






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