Transistors with built-in Resistor
UNR32AM
Silicon NPN epitaxial planar type
Unit: mm
For digital circuits - Features
Suitable for high-density mounting and downsizing of the equipment Contribute to low power consumption
0.33+0.05 0.02 3
0.10+0.05 0.02
(0.40) (0.40) 0.80±0.05 1.20±0.05
- Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Total power dissipation Junction temperature Storage temp