Transistors with built-in Resistor
UNR32AE
Silicon NPN epitaxial planar type
For digital circuits Features
Suitable for high-density mounting and downsizing of the equipment Contribute to low power consumption
0.23+0.05 0.02 0.33+0.05 0.02 3 0.15 min. 0.80±0.05 1.20±0.05 0.10+0.05 0.02
Unit: mm
(0.40) (0.40) 0.80±0.05 1.20±0.05 5°
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Total power dissipation Junction temperature S