Transistor
Small switching (30V, 0.1A)
UM6K1N
FFeatures 1) Two 2SK3018 transistors in a single UMT package. 2) The MOSFET elements are independent, eliminating interference. 3) Mounting cost and area can be cut in half. 4) Low on-resistance. 5) Low voltage drive (2.5V) makes this device ideal for portable equipment. FApplications Interfacing, switching (30V, 100mA) FStructure Silicon N-channel MOSFET FExternal dimensions (Units: mm)
FEquivalent circuit
FAbsolute maximum ratings (Ta = 25_C)
F
ROHM Semiconductor
Dual N-channel MOSFET - MOSFET
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-363 Plastic-Encapsulate MOSFETS
UM6K1N Dual N-channel MOSFET
V(BR)DSS
30 V
RDS(on)MAX
8Ω@4V
13Ω@2.5V
ID
100mA
SOT-363
FEATURE 1) Two 2SK3018 transistors in a package.
2) The MOS FET elements are independent, eliminating mutual interference. 3) Mounting cost and area can be cut in half. 4) Low On-resistance. 5) Low voltage drive (2.5V drive) makes this device ideal for portable equipment.
MARKING
Equivalent Circuit
MOSFET MAXIM