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UM6K1 Datasheet PDF

  • Small switching (30V/ 0.1A) - Data

    Transistor Small switching (30V, 0.1A) UM6K1N FFeatures 1) Two 2SK3018 transistors in a single UMT package. 2) The MOSFET elements are independent, eliminating interference. 3) Mounting cost and area can be cut in half. 4) Low on-resistance. 5) Low voltage drive (2.5V) makes this device ideal for portable equipment. FApplications Interfacing, switching (30V, 100mA) FStructure Silicon N-channel MOSFET FExternal dimensions (Units: mm) FEquivalent circuit FAbsolute maximum ratings (Ta = 25_C) F

    ROHM Semiconductor
    ROHM Semiconductor


  • Dual N-channel MOSFET - MOSFET

    JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETS UM6K1N Dual N-channel MOSFET V(BR)DSS 30 V RDS(on)MAX 8Ω@4V 13Ω@2.5V ID 100mA SOT-363 FEATURE 1) Two 2SK3018 transistors in a package. 2) The MOS FET elements are independent, eliminating mutual interference. 3) Mounting cost and area can be cut in half. 4) Low On-resistance. 5) Low voltage drive (2.5V drive) makes this device ideal for portable equipment. MARKING Equivalent Circuit MOSFET MAXIM

    JCET
    JCET




 






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