|
TPCC8137 Datasheet PDF
- MOSFET, Transistor - MOSFET
TPCC8137 MOSFETs Silicon P-Channel MOS (U-MOS ) TPCC8137 1. Applications Power Management Switches 2. Features (1) (2) (3) (4) Small, thin package Low drain-source on-resistance: RDS(ON) = 8.0 mΩ (typ.) (VGS = -4.5 V) Low leakage current: IDSS = -10 A (max) (VDS = -20 V) Enhancement mode: Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -1 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance 1 2012-09-12 Rev.1.0 TPCC8137 4. Absolute Maximum Ratings (Not
Toshiba Semiconductor
|
|
Please enter the part name