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TPCC8136 Datasheet PDF
- Field Effect Transistor - Transistor
TPCC8136 MOSFETs Silicon P-Channel MOS (U-MOS ) TPCC8136 1. Applications Power Management Switches 2. Features (1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 13 mΩ (typ.) (VGS = -4.5 V) Low leakage current: IDSS = -10 A (max) (VDS = -20 V) Enhancement mode: Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -1 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance 4. Absolute Maximum Ratings (Note) (T
Toshiba
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