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TPCC8106 Datasheet PDF
- MOSFET, Transistor - MOSFET
TPCC8106 MOSFETs Silicon P-Channel MOS (U-MOS ) TPCC8106 1. Applications Motor Drivers DC-DC Converters Switching Voltage Regulators 2. Features (1) (2) (3) (4) Small, thin package Low drain-source on-resistance: RDS(ON) = 9.5 mΩ (typ.) (VGS = -10 V) Low leakage current: IDSS = -10 A (max) (VDS = -40 V) Enhancement mode: Vth = -2.0 to -3.0 V (VDS = -10 V, ID = -1.0 mA) 3. Packaging and Internal Circuit 1,2,3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance 4. Absolute Maximum Ratings (
Toshiba Semiconductor
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