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TPCA8081 Datasheet PDF
- MOSFET, Transistor - MOSFET
TPCA8081 MOSFETs Silicon N-Channel MOS (U-MOS ) TPCA8081 1. Applications Notebook PCs Mobile Handsets 2. Features (1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 2.3 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 A (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance 4. Absolute Maximum Ratings (Note) (Ta
Toshiba
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