|
TIP140T Datasheet PDF
- Silicon NPN Power Transistor - Transistor
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification TIP140T DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= 5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min) ·Complement to Type TIP145T APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Em
Inchange Semiconductor - NPN Epitaxial Silicon Darlington Transistor - Transistor
TIP140T , TIP141T , TIP142T NPN Epitaxial Silicon Darlington Transistor TIP140T , TIP141T , TIP142T NPN Epitaxial Silicon Darlington Transistor Features Monolithic Construction With Built In Base-Emitter Shunt Resistors High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A (Min.) Industrial Use Complement to TIP145T, 146T, 147T Equivalent Circuit C July 2009 B 1 TO-220 1.Base 2.Collector 3.Emitter R1 R1 8kΩ R2 0.12kΩ R2 E Absolute Maximum Ratings * TA = 25°C unless otherwi
Fairchild Semiconductor
|
|
Please enter the part name