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STT6603 Datasheet PDF
- P-Channel Enhancement Mode Field Effect Transistor - Transistor
STT6603 S a mHop Microelectronics C orp. Ver 1.0 P-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS -60V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. SOT-223 package. ID -2.5A R DS(ON) (m Ω) Max 180 @ VGS=-10V 240 @ VGS=-4.5V D G S G SO T - 223 S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b a
SamHop Microelectronics
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