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STT6405 Datasheet PDF
- P-Channel Enhancement Mode Mos.FET - Data
STT6405 Elektronische Bauelemente -5.0 A, -30 V, RDS(ON) 50 mΩ P-Channel Enhancement Mode Mos.FET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION The STT6405 uses advanced trench technology to provide excellent on-resistance with low gate change. The device is suitable for use as a load switch or in PWM applications. FEATURES - - z N-Channel Lower Gate Charge Small Footprint & Low Profile Package PACKAGE DIMENSIONS REF. A A1 A2 c D E E1 Millimeter
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