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STPSC806 Datasheet PDF
- Schottky Barrier 600 V power Schottky silicon carbide diode - Diode
STPSC806 600 V power Schottky silicon carbide diode Features - - - No or negligible reverse recovery Switching behavior independent of temperature Particularly suitable in PFC boost diode function A K Description The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide bandgap material allows the design of a Schottky diode structure with a 600 V rating. Due to the Schottky construction no recovery is shown at turn-off and
ST Microelectronics - 600 V power Schottky silicon carbide diode - Diode
STPSC806D 600 V power Schottky silicon carbide diode Features - - - No or negligible reverse recovery Switching behavior independent of temperature Particularly suitable in PFC boost diode function A K Description The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide bandgap material allows the design of a Schottky diode structure with a 600 V rating. Due to the Schottky construction no recovery is shown at turn-off and
STMicroelectronics
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