|
SPN4402 Datasheet PDF
- N-Channel Enhancement Mode MOSFET - MOSFET
SPN4402 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN4402 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . FEATURES 30V, 12A,RDS(ON)= 13mΩ@VGS= 10V 30V, 10
SYNC POWER - N-Channel Enhancement Mode MOSFET - MOSFET
SPN4402B N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN4402B is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . FEATURES 30V, 12A,RDS(ON)= 15mΩ@VGS= 10V 30V,
SYNC POWER
|
|
Please enter the part name