New Product
SiR800DP
Vishay Siliconix
N-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 20 RDS(on) (Ω) 0.0023 at VGS = 10 V 0.0026 at VGS = 4.5 V 0.0034 at VGS = 2.5 V ID (A)a 50 50 50 41 nC Qg (Typ.)
FEATURES
Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Gen III Power MOSFET 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002, 95, EC
PowerPAK® SO-8
APPLICATIONS
6.15 mm
S 1 2 3 4 D 8 7 6 5 D D D S S G
5.15 mm
DC, DC Low Voltage Drive POL OR-