PMPB11EN
MD -6
30 V N-channel Trench MOSFET
Rev. 1 16 May 2012 Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
DF
N2
020
1.2 Features and benefits
Trench MOSFET technology Very fast switching Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm Exposed drain pad for excellent t