PMEM4020AND
NPN transistor, Schottky recti er module
Rev. 01 4 October 2004
w w w . D a t a S h e e t 4 U
Product data sheet
1. Product pro le
1.1 General description
Combination of an NPN transistor with low VCEsat and high current capability and a planar Schottky barrier recti er with an integrated guard ring for stress protection in a SOT457 (SC-74) small plastic package. PNP complement: PMEM4020APD.
1.2 Features
s s s s s s 600 mW total power dissipation High current capability up to 2