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PBSS301PD Datasheet PDF
- 4A PNP low VCEsat (BISS) transistor PNP low VCEsat Breakthrough - Transistor
PBSS301PD 20 V, 4 A PNP low VCEsat (BISS) transistor Rev. 02 25 April 2005 Product data sheet 1. Product pro le 1.1 General description PNP low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT457 (SC-74) SMD plastic package. NPN complement: PBSS301ND. 1.2 Features s s s s s Very low collector-emitter saturation resistance Ultra low collector-emitter saturation voltage 4 A continuous collector current Up to 15 A peak current High ef ciency due to less heat generation 1.3 Appl
NXP Semiconductors
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