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P75N06 Datasheet PDF
- PJP75N06 - Data
PJP75N06 60V N-Channel Enhancement Mode MOSFET FEATURES RDS(ON), VGS@10V,IDS@30A=13mΩ RDS(ON), [email protected],IDS@30A=18mΩ Advanced Trench Process Technology High Density Cell Design For Ultra Low On-Resistance Specially Designed for Converters and Power Motor Controls Fully Characterized Avalanche Voltage and Current Pb free product : 99% Sn above can meet RoHS environment substance directive request MECHANICALDATA Case: TO-220 Molded Plastic Terminals : Solderable per MIL-STD-750D,Metho
Pan Jit International - CEP75N06 - Data
CEP75N06, CEB75N06 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 87A, RDS(ON) = 12mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous@ TC = 25 C @ TC = 100 C Drain Current-Pulsed a Maximum Po
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