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P1610AD Datasheet PDF
- N-Channel Enhancement Mode MOSFET - MOSFET
P1610AD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 110V 16mΩ @VGS = 10V ID 45A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS, TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 110 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC= 25 °C TC= 100 °C ID IDM 45 28 80 Avalanche Current IAS 13.7 Avalanche Energy2 EAS 93 Power Dissipation TC= 25 °C TC= 100°C PD 83 33 Junction & S
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