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NE856M02 Datasheet PDF
- NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER - Transistor
NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER FEATURES HIGH COLLECTOR CURRENT: 100 mA MAX NEW HIGH GAIN POWER MINI-MOLD PACKAGE (SOT-89 TYPE) HIGH OUTPUT POWER AT 1 dB COMPRESSION: 22 dBm TYP at 1 GH- HIGH IP3: 32 dBm TYP at 1 GHz NE856M02 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE M02 BOTTOM VIEW 4.5±0.1 1.6±0.2 1.5±0.1 NEC's NE856M02 is an NPN silicon epitaxial bipolar transistor designed for medium power applications requiring high dynamic range
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