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NE678M04 Datasheet PDF
- MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR - Transistor
MEDIUM POWER NPN SILICON NE678M04 HIGH FREQUENCY TRANSISTOR FEATURES HIGH GAIN BANDWIDTH: fT = 12 GH- HIGH OUTPUT POWER: P-1dB = 18 dBm at 1.8 GH- HIGH LINEAR GAIN: GL = 13 dB at 1.8 GH- NEW LOW PROFILE M04 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead style for better RF performance +0.40-0.05 2 +0.30 2.05±0.1 1.25±0.1 3 2.0±0.1 R55 1.25 0.650.65 0.650.65 DESCRIPTION The NE678M04 is fabricated using NEC's HFT3 wafer process. With a transition frequency of
NEC - NPN SILICON RF TRANSISTOR - Transistor
NPN SILICON RF TRANSISTOR NE678M04 , 2SC5753 JEITA Part No. NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES Ideal for medium output power amplification PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm HFT3 technology (fT = 12 GHz) adopted High reliability through use of gold electrodes Flat-lead 4-pin thin-type super minimold package ORDERING INFORMATION Part Number NE678M04-A 2SC5753-A NE678
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