L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET - Data
PRELIMINARY DATA SHEET
Hetero Junction Field Effect transistor
NE38018
L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET
FEATURES
Super Low noise figure & High Associated Gain NF = 0.55 dB typ. Ga = 14.5 dB typ. OIP3 = 22 dBm (V67), OIP3 = 23 dBm (V68) typ. at f = 2 GH- NF = 0.4 dB typ. Ga = 20 dB typ. at f = 900 MH- 4 pins super mini mold package Wg = 800 m
ORDERING INFORMATION (PLAN)
Part Number NE38018-T1 Quantity 3 kpcs, Reel. Packing Style Embossed tape 8 mm wide. Pin3 (Source), Pin4 (Dr
NEC
L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET - Data
PRELIMINARY DATA SHEET
Hetero Junction Field Effect transistor
NE38018
L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET
FEATURES
Super Low noise figure & High Associated Gain NF = 0.55 dB typ. Ga = 14.5 dB typ. OIP3 = 22 dBm (V67), OIP3 = 23 dBm (V68) typ. at f = 2 GH- NF = 0.4 dB typ. Ga = 20 dB typ. at f = 900 MH- 4 pins super mini mold package Wg = 800 m
ORDERING INFORMATION (PLAN)
Part Number NE38018-T1 Quantity 3 kpcs, Reel. Packing Style Embossed tape 8 mm wide. Pin3 (Source), Pin4 (Dr