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NE325S01 Datasheet PDF
- C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET - Amplifier
C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES SUPER LOW NOISE FIGURE: 0.45 dB TYP at 12 GHz Noise Figure, NF (dB) NE325S01 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY 24 VDS = 2 V ID = 10 mA GATE LENGTH: ≤ 0.20 m GATE WIDTH: 200 m LOW COST PLASTIC PACKAGE Ga 16 1.0 12 0.5 8 DESCRIPTION 0 NF 1 2 4 6 8 10 14 20 4 30 The NE325S01 is a Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons.
NEC - C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET - Amplifier
C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES SUPER LOW NOISE FIGURE: 0.45 dB TYP at 12 GHz Noise Figure, NF (dB) NE325S01 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY 24 VDS = 2 V ID = 10 mA GATE LENGTH: ≤ 0.20 m GATE WIDTH: 200 m LOW COST PLASTIC PACKAGE Ga 16 1.0 12 0.5 8 DESCRIPTION 0 NF 1 2 4 6 8 10 14 20 4 30 The NE325S01 is a Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons.
NEC
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