N-Channel Enhancement Mode Field Effect Transistor - Transistor
May 1994
NDP710A , NDP710AE , NDP710B , NDP710BE NDB710A , NDB710AE , NDB710B , NDB710BE N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and co
Fairchild
N-Channel Enhancement Mode Field Effect Transistor - Transistor
May 1994
NDP710A , NDP710AE , NDP710B , NDP710BE NDB710A , NDB710AE , NDB710B , NDB710BE N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and co