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MT2312 Datasheet PDF
- N-Channel Power MOSFET, Transistor - MOSFET
茂 半導體股 有限公司 Mos-Tech Semiconductor Co.,LTD. N-Channel Enhancement Mode Field Effect Transistor MT2312 FEATURES ● Super high dense cell design for low RDS(ON) ● Rugged and reliable ● Simple drive requirement ● SOT-23 package PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Typ 20V 4.5A 30@ VGS=4.5V 50@ VGS=2.5V NOTE：The MT2312 is available in a lead-free package D S G D G S ABSOLUTE MAXIMUM RATINGS（TA=25℃ unless otherwise noted） Parameter Drain-Source Voltage Ga
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