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MRFG35010 Datasheet PDF
- Gallium Arsenide PHEMT RF Power Field Effect Transistor - Transistor
Freescale Semiconductor Technical Data MRFG35010 Rev. 6, 12, 2004 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL, MMDS or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB or Class A linear base station applications. Typical W CDMA Performance: 42 dBc ACPR, 3.55 GHz, 12 Volts, IDQ = 180 mA, 5 MH- Offset, 3.84 MH- BW, 64 DPCH (8.5 dB P, A @ 0.01% Probability) Output Power 1 Watt Power Gain 10 dB
Freescale Semiconductor - Gallium Arsenide PHEMT - Data
Freescale Semiconductor Technical Data Document Number: MRFG35010AN Rev. 0, 5, 2006 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL, MMDS, BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB Customer Premise Equipment (CPE) applications. Typical Single - Carrier W - CDMA Performance: VDD = 12 Volts, IDQ = 130 mA, Pout = 1 Watt Avg., 3550 MHz, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% P
Freescale Semiconductor
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