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MRF9060S Datasheet PDF
- RF Power Field Effect Transistors - Transistor
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Available at: http:, , www.motorola.com, rf, Tools RF Reference Design Library The RF Sub Micron MOSFET Line RF Power Field Effect Transistors N Channel Enhancement Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of these devices makes them ideal for large signal, common source amplifier applications in 26 volt base station equipment. Device Feature
Motorola Semiconductors - N-CHANNEL BROADBAND RF POWER MOSFETs - MOSFET
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF9060, D The RF Sub Micron MOSFET Line RF Power Field Effect Transistors N Channel Enhancement Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large signal, common source amplifier applications in 26 volt base station equipment. Typical Two Tone Performance at 945 MHz, 26 Volts Output Po
Motorola Semiconductors
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