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MJH16010 Datasheet PDF
- Silicon NPN Power Transistor - Transistor
INCHANGE Semiconductor isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Voltage- : VCEO(SUS)= 450V(Min) ·Low VCE(sat)@IC=10A ·Fast switching speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·High voltage inverters ·Off - line power supplies ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCEV Collector-Emitter Voltage 850 VCEO(SUS) Collector-Emitter Voltag
Inchange Semiconductor - Power Transistor - Transistor
New Jersey Semiconductor
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